SCR based ESD protection of Output Drivers in EPI technologies avoiding competitive triggering
نویسندگان
چکیده
Self protective output drivers have been used extensively as an elegant solution against Electro Static Discharge. However, recent measurement data show unexpectedly low HBM and MM results in low resistive EPI technologies. The HBM-TLP correlation issue is investigated and a novel local parallel protection scheme for output drivers is presented, solving the competitive triggering issue using only a very small series (~10 Ohm) resistance without requiring the expensive Deep Nwell process step.
منابع مشابه
Solving the problems with traditional Silicon Controlled Rectifier (SCR) approaches for ESD
The Silicon Controlled Rectifier (‘SCR’) is widely used for ESD protection due to its superior performance and clamping capabilities. However, many believe that SCR based ESD protection is prone to latch-up, competitive triggering, long development cycles and slow trigger speed. This paper provides an overview of the problems and corresponding design solutions available.
متن کاملElectrostatic Discharge Protection Circuit for High-Speed Mixed-Signal Circuits
ESD, the discharge of electrostatically generated charges into an IC, is one of the most important reliability problems for ultra-scaled devices. This electrostatic charge can generate voltages of up to tens of kilovolts. These very high voltages can generate very high electric fields and currents across semiconductor devices, which may result in dielectric damage or melting of semiconductors a...
متن کاملDesign optimization of ESD protection and latchup prevention for a serial I/O IC
ESD/latchup are often two contradicting variables during IC reliability development. Trade-off between the two must be properly adjusted to realize ESD/latchup robustness of IC products. A case study on SERIAL Input/Output (I/ O) IC’s is reported here to reveal this ESD/latchup optimization issue. SERIAL I/O IC features a special clamping property to wake up PC’s during system standby situation...
متن کاملLatchup-Free ESD Protection Design With Complementary Substrate-Triggered SCR Devices
The turn-on mechanism of silicon-controlled rectifier (SCR) devices is essentially a current triggering event. While a current is applied to the base or substrate of an SCR device, it can be quickly triggered on into its latching state. In this paper, latchup-free electrostatic discharge (ESD) protection circuits, which are combined with the substrate-triggered technique and an SCR device, are ...
متن کاملSubstrate-Triggered SCR Device for On-Chip ESD Protection in Fully Silicided Sub-0.25- m CMOS Process
The turn-on mechanism of a silicon-controlled rectifier (SCR) device is essentially a current triggering event. While a current is applied to the base or substrate of the SCR device, it can be quickly triggered into its latching state. In this paper, a novel design concept to turn on the SCR device by applying the substrate-triggered technique is first proposed for effective on-chip electrostat...
متن کامل